Method and apparatus for determining the temperature of a junction using voltage responses of the junction and a correction factor

ABSTRACT

Method and system for periodically measuring the junction temperature of a semiconductor device. The junction is excited by at least two sequential predetermined currents of different magnitudes. The voltage response of the junction to the at least two currents is measured and the temperature of the junction is calculated, while substantially canceling ohmic effects, by using the voltage response and a correction factor. Whenever desired, the junction is excited by a set of at least four sequential different currents having known ratios. The voltage response to the set is measured and the correction factor is calculated by using each voltage response to the set.

This application is a continuation of prior U.S. patent application Ser.No. 10/301,831 filed Nov. 21, 2002, now U.S. Pat. No. 6,870,357.

TECHNICAL FIELD OF THE INVENTION

The present invention relates generally to the field of temperaturemeasurement in semiconductor circuitry, and, more particularly, to amethod and apparatus for determining the temperature of a semiconductorjunction utilizing a correction factor to eliminate the effects ofparasitic Ohmic resistances.

BACKGROUND OF THE INVENTION

In many applications there is a need to keep an operating system withinpredefined temperature ranges. A common type of temperature sensingdevice used for this task is known as a “contact device,” which isrelatively inexpensive and can be used to accurately measuretemperature. A contact device operates in direct contact with a measuredobject. In this way, the contact device senses the temperature of theobject thereby generating a temperature measurement can be obtained.

One type of contact device temperature sensor is based on asemiconductor junction (usually Silicon or Germanium), which can becompactly packaged as a small temperature sensor. The temperaturemeasurement in such devices is based on the strong temperaturedependency of the electrical current and voltage of the semiconductorjunction. This type of temperature measurement is particularlyattractive in integrated circuits (“IC”) in which the sensing device isusually implemented by a bipolar transistor integrated into thesemiconductor substrate.

A typical measurement array, based on a semiconductor junction device,is illustrated in FIG. 1. Current source 110 input and the voltage overthe base (b) emitter (e) junction of bipolar transistor 100 are utilizedfor temperature measurement. The forward current I_(f), and forwardvoltage V_(f), of a semiconductor junction, are related by theEbers-Moll relationship (also known as the Shockley equation):

$I_{f} = {{I_{s} \cdot ( {{\mathbb{e}}^{\frac{V_{f}}{\eta \cdot V_{t}}} - 1} )}\underset{V_{f}\operatorname{>>}V_{t}}{arrow}{I_{s} \cdot {\mathbb{e}}^{\frac{V_{f}}{\eta \cdot V_{t}}}}}$where Is is the junction saturation current, η is an ideality factor(emission coefficient), and V_(t) is the junction Thermal Voltage. TheThermal Voltage can be determined according to the junction temperatureby the following rule:

${V_{t} = \frac{k \cdot T}{q}},$where k is Boltzmann's constant, q is the electron charge, and T is thejunction temperature (K°). Since the forward junction current I_(f) isconstant, the junction temperature may be determined by measuring theforward junction voltage V_(f) and by computing

$V_{t}{V_{f} \cdot {( {{\eta \cdot \ln}\frac{I_{f}}{I_{s}}} )^{- 1}.}}$The junction temperature T can then be calculated from

$T = {\frac{q \cdot V_{t}}{k}.}$

However, due to parasitic effects (e.g., contact resistance), a precisemeasurement of the junction forward voltage V_(f) can not be obtained.In fact, the closest measurement of the junction forward voltage can beobtained via the b and e terminals, V_(be), of bipolar transistor 100.The Ohmic resistances r_(c), r_(b), and r_(e), illustrated in FIG. 1,are the main obstacle in obtaining an accurate measurement of theforward voltage V_(f) of the junction.

One method to solve this problem is described in U.S. Pat. No.5,195,827, where the effect of the Ohmic resistances is eliminated bycarrying out a sequence of three voltage measurements corresponding tothree different forward currents (I_(f1), I_(f2), and I_(f3)). Whilethis method improves the result of the temperature measurement, asignificant computation effort (involving log operations) is requiredfor each sequence of measurements to obtain the temperature measurement.Therefore, a central processor is utilized in this device for automaticexcitation and temperature calculation. In addition, the computationperformed in this method requires that the ratios between the differentthree forward currents will be substantially large, and a possibleembodiment of a current source suggests utilizing three resistors ofdifferent resistance values supplied by a common voltage.

The aforementioned drawbacks lead to inaccuracies in the temperaturemeasurement. In addition, using the computation method results in atemperature offset of about one-half (½) of a degree in the calculatedtemperature.

A temperature measurement application that uses two current sources formeasuring the temperature on diode based devices is disclosed inNational Semiconductor publication “Design Consideration for PC ThermalManagement”. The method described in this publication uses two currentsof different magnitudes (x1 and x10) to excite the diode junction. Thisapplication however does not provide any way to eliminate Ohmic effects.

SUMMARY OF THE INVENTION

To address the above-discussed deficiencies of the prior art, it is anobject of the present invention to provide a method and apparatus formeasuring the temperature of a semiconductor junction based on apre-calculated correction factor. Other objects of the present inventionare to provide a method and apparatus that (i) substantially reduces thecomputational effort involved in a temperature measurement of asemiconductor junction, (ii) measures the temperature of a semiconductorjunction that is based on a pre-calculated correction factor and thevoltage measurements that correspond to the input of two adjacentforward currents, (iii) measures the temperature of a semiconductorjunction in which the ratio of the applied forward input currents isrelatively small, and (iv) measure temperature of a semiconductorjunction accurately and quickly enough to cancel the impacts ofresistive parasitic elements in the current loop. Other objects andadvantages of the invention will become apparent as the descriptionproceeds.

The present invention is directed to a method and system forperiodically measuring the junction temperature of a semiconductordevice. According to one advantageous embodiment of the invention, thetemperature of the semiconductor junction is measured by exciting thejunction by at least two sequential predetermined currents of differentmagnitudes, measuring the voltage response of the junction to the atleast two currents, and calculating the temperature of the junction,while substantially canceling Ohmic effects by using the voltageresponse and a correction factor obtained by periodically (or wheneverdesired) performing the following steps:

-   -   exciting the junction by a set of at least four sequential        different currents having known ratios;    -   measuring the voltage response to the set of currents; and    -   calculating the correction factor by using each voltage response        to the set of currents.

According to another preferred embodiment of the invention the ratios ofthe first I₁ and second I_(1a) currents, the first I₁ and third I₂currents, and the second I_(1a) and fourth I_(2a) currents of thesequential different currents are fixed and predetermined. The ratio ofthe first I₁ and third I₂ currents preferably equals to I₁/I₂=2, and theratio I₁/I_(1a) of the first and second currents preferably equals tothe ratio I₁/I_(2a) of the third and fourth currents. The ratio of thefirst and second currents and the ratio of the third and fourth currentspreferably equals to I₁I_(1a)=I₂/I_(2a)=10.

According to one preferred embodiment of the invention the at least twosequential predetermined currents equals to the first I₁ and secondI_(1a) currents. The correction factor K is preferably obtained by thesubtraction of a first voltage differenceΔV ₂ =V(I _(1a))−V(I ₁)from a second voltage differenceΔV ₂ =V(I _(2a))−V(I ₂),where the second voltage difference is the voltage difference of thevoltage measurements corresponding to the fourth and third currents, andwhere the first voltage difference is the voltage difference of thevoltage measurements corresponding to the second and first currents.This way the junction temperature T′ can be obtained by subtracting thecorrection factor K from the voltage difference V(I_(1a))-V(I₁) of thevoltage measurements corresponding to the at least two sequentialpredetermined currents, and by multiplying the subtraction result by afixed constantT′=C.(V(I ₁)−V(I ₁)−K).

The correction factor K can be obtained by multiplying the subtractionresult obtained by subtracting a first voltage differenceΔV ₂ =V(I _(1a))−V(I ₁)from a second voltage differenceΔV ₂ =V(I _(2a))−V(I ₂)by a predetermined constant, where the second voltage difference is thevoltage difference of the voltage measurements corresponding to thefourth and third currents, the first voltage difference is the voltagedifference of the voltage measurements corresponding to the second andfirst currents, and where the predetermined constant corresponds to theratio of the first I₁ and third I₂ currents.

The invention may further comprise a current generator capable ofproducing at least four sequential different currents. The currentgenerator may be comprised of: a current source for providing a fixedcurrent I_(ref); a first current mirror stage comprising a set ofswitched current mirror circuitries each of which is capable ofmirroring the current produced by the current source; and a secondcurrent mirror stage comprising a set of switched current mirrorcircuitries each of which is capable of mirroring the total currentproduced by the first current mirror stage, wherein the currentnxrxI_(ref) produced by the current generator equals to themultiplication of the fixed current source (I_(ref)) by the number (r)of current mirror circuitries switched ON in the first current mirrorstage multiplied by the number (n) of current mirror circuitriesswitched ON in the second current mirror stage.

According to yet another preferred embodiment of the invention thetemperature measurement of the semiconductor junction also comprises:providing an analog to digital-converter capable of receiving a measuredvoltage input and a reference voltage input, and outputting a sequenceof pulse signals with a rate proportional to the ratio between themeasured and reference voltages; providing a counter capable ofperforming UP and DOWN count, triggered by the pulse signals emanatingfrom the analog to digital converter, staring from an initial valueobtained via an input terminal, and capable of outputting the countresult via output terminal; providing a storage device capable ofstoring the value being outputted via the output terminal, and capableof outputting an inverted value of its content; providing a selectordevice for selecting the value introduced on the input terminal, thevalue being a value obtained from the storage device or an externalvalue for adjusting measurements results; and providing a control unitcapable of controlling the selector device to determine which value isbeing selected,, determining whether UP or DOWN count is performed bythe counter, instructing the counter to load a value via the inputterminal, and determining a time base for each count operation performedby the counter. The term “selector,” as used herein, refers to a devicethat, by utilizing a control signal, is capable of selecting one outputsignal from a plurality of input signals.

This way the correction factor K can be obtained by:

-   -   resetting the content of the counter;    -   providing on the measured voltage input of the analog to digital        converter the junction voltage V(I_(2a)) corresponding to the        fourth current and performing UP count by the counter;    -   providing on the measured voltage input of the analog to digital        converter the junction voltage V(I₂) corresponding to the third        current and-performing DOWN count by the counter;    -   providing on the measured voltage input of the analog to digital        converter the junction voltage v(I₁) corresponding to the first        current and performing UP count by the counter; and    -   providing on the measured voltage input of the analog to digital        converter the junction voltage V(I_(1a)) corresponding to the        fourth current and performing DOWN count by the counter.

With this result the junction temperature T′ is obtained by performingthe following steps:

-   -   a) loading into the counter the inversion of the correction        factor stored in the storage device;    -   b) providing on the measured voltage input of the analog to        digital converter the junction voltage V(I_(1a)) corresponding        to the second current and performing UP count by the counter;        and    -   c) providing on the measured voltage input of the analog to        digital converter the junction voltage V(I₁) corresponding to        the first current and performing DOWN count by the counter.

The external value introduced on the input terminal of the counter viathe selector device can be used to convert the temperature measurementfrom degrees Kelvin to degrees Centigrade. Optionally, the correctionfactor is obtained once within a predetermined period of time, oralternatively, after a predetermined number of temperature measurementsare performed.

Before undertaking the DETAILED DESCRIPTION OF THE INVENTION below, itmay be advantageous to set forth definitions of certain words andphrases used throughout this patent document: the terms “include” and“comprise,” as well as derivatives thereof, mean inclusion withoutlimitation; the term “or,” is inclusive, meaning and/or; and the phrases“associated with” and “associated therewith,” as well as derivativesthereof, may mean to include, be included within, interconnect with,contain, be contained within, connect to or with, couple to or with, becommunicable with, cooperate with, interleave, juxtapose, be proximateto, be bound to or with, have, have a property of, or the like. Itshould be noted that the functionality associated with any particularcontroller may be centralized or distributed, whether locally orremotely. Definitions for certain words and phrases are providedthroughout this patent document, those of ordinary skill in the artshould understand that in many, if not most instances, such definitionsapply to prior, as well as future uses of such defined words andphrases.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the present invention and itsadvantages, reference is now made to the following description taken inconjunction with the accompanying drawings, in which like referencenumerals represent like parts:

FIG. 1 illustrates a prior art implementation for measuring temperatureof a semiconductor junction;

FIG. 2 illustrates a preferred implementation for a measurement arrayaccording to the present invention;

FIG. 3 illustrates a preferred implementation of a current generatoraccording to the present invention;

FIG. 4 a illustrates a block diagram of circuitry for obtaining atemperature measurement according to a preferred embodiment of theinvention;

FIGS. 4 b and 4 c provide flow diagrams illustrating an exemplaryprocess for calculating a correction factor and the junctiontemperature, illustratively using the apparatus of FIG. 4 a, accordingto the present invention;

FIG. 4 d provides a flow diagram illustrating an exemplary process formeasuring a correction factor, and the semiconductor junction accordingto the present invention; and

FIGS. 5 a and 5 b provide flow diagrams illustrating a process forcalculating a correction factor and the junction temperature accordingto the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention provides a fast and accurate method for obtainingtemperature measurement of a semiconductor junction. According to apreferred embodiment of the invention, a correction factor is calculatedto enable an accurate computation of the junction temperature. Thecomputation of the correction factor involves four voltage measurements,and the temperature measurement performed thereafter requires only twovoltage measurements of the junction. Thus, with this method junctiontemperature is obtained by utilizing less voltage measurements, and lesscomputation efforts, per measurement, in comparison with prior artmethods. As will be explained in details hereinafter, these advantagescan be further exploited to develop simplified temperature measurementdevices.

FIG. 2 illustrates a measurement array, in which current generator 200is used to generate forward currents of four different magnitudes I=I₁,I_(1a), I₂, or I_(2a) The currents magnitudes produced by the currentgenerator are set to give the following ratios:

${\frac{I_{1a}}{I_{1}} = {\frac{I_{2a}}{I_{2}} = {a\mspace{20mu}( {I_{1} \neq I_{2}} )}}},\mspace{14mu}{{{and}\mspace{14mu}\frac{I_{2}}{I_{1}}} = {b.}}$The voltage measured over the base emitter junction (V_(be)) whichcorresponds to the input of each of these currents, and the givencurrents ratios, are used for the computation of a correction factor,which is then used to facilitate the temperature measurements of thesemiconductor junction.

The calculation of the correction factor is carried out utilizing themeasured voltages V_(be1), V_(be1a), V_(be2), and V_(be2a), whichcorresponds to the forward current inputs I₁, I_(1a), I₂, and I_(2a),respectively. After the voltage measurements are obtained, theEbers-Moll relationship is utilized to calculate the correction factor.A process for calculating the correction factor (K) is illustrated inFIG. 5A. In steps 501 to 504 the voltage over the semiconductor junction(V_(be1)(I₁), V_(be1a)(I_(1a)), V_(be2)(I₂) and V_(be2a)(I_(2a))) ismeasured.

In general, the base-emitter voltage can be expressed by the Ebers-Mollrelationship as follows:

$\begin{matrix}{V_{be} = {{{I_{e} \cdot r_{e}} + {( {1 - \alpha} ) \cdot I_{e} \cdot r_{b}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{I_{e}}{I_{s}}}} = {{I_{e} \cdot R_{eq}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{l_{e}}{l_{s}}}}}} & (I)\end{matrix}$whereR _(eq) =r _(e)+(1−α).r_(b).The current gain

$\alpha = \frac{I_{c}}{I_{e}}$is used in this computation to express the base currentI _(b)=(1−α).I _(e)in terms of the input currentI=I _(e.)Thus, by applying the above mentioned input currents I₁, I_(1a), I₂, andI_(2a), the following voltage measurements are obtained:

$\begin{matrix}\begin{matrix}{{V_{be1} = {{I_{1} \cdot R_{eq}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{I_{1}}{I_{s}}}}},} \\{{V_{be1a} = {{I_{1a} \cdot R_{eq}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{I_{1a}}{I_{s}}}}},} \\{{V_{be2} = {{I_{2} \cdot R_{eq}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{I_{2}}{I_{s}}}}},} \\{V_{be2a} = {I_{2a} = {{I_{2a} \cdot R_{eq}} + {{\eta \cdot V_{t} \cdot {lan}}\frac{I_{2a}}{I_{s}}}}}}\end{matrix} & ({II})\end{matrix}$these measured voltages are then used to compute the voltage differencesΔV₁ and ΔV₂, as follows:

$\begin{matrix}\begin{matrix}{{{\Delta\; V_{1}} = {{V_{be1a} - V_{be1}} = {{R_{eq} \cdot ( {I_{1a} - I_{1}} )} + {\eta \cdot V_{t} \cdot ( {{lan}\frac{I_{1a}}{I_{s}}{lan}\frac{I_{1}}{I_{s}}} )}}}},} \\{{\Delta\; V_{2}} = {{V_{be2a} - V_{be2}} = {{R_{eq} \cdot ( {I_{2a} - I_{2}} )} + {\eta \cdot V_{t} \cdot ( {{lan}\frac{I_{2a}}{I_{s}}{lan}\frac{I_{2}}{I_{s}}} )}}}}\end{matrix} & ({III})\end{matrix}$by using the currents ratios

$\frac{I_{1a}}{I_{1}} = {\frac{I_{2a}}{I_{2}} = \alpha}$these expressions can be simplified to read:

$\begin{matrix}\begin{matrix}{{\Delta\; V_{1}} = {{R_{eq} \cdot I_{1} \cdot ( {a - 1} )} + {{\eta \cdot V_{t} \cdot {lan}}\;(a)}}} \\{{\Delta\; V_{2}} = {{R_{eq} \cdot I_{2} \cdot ( {a - 1} )} + {{\eta \cdot V_{t} \cdot {lan}}\;(a)}}}\end{matrix} & ({IV})\end{matrix}$the correction factor K can be now obtained by subtracting theexpressions in (IV) ΔV₂−ΔV₁, and using the currents ratio

$\frac{I_{2}}{I_{1}} = {b:}$ΔV ₂ −ΔV ₁ =R _(eq) .I ₁.(a−1).(b−1)

$\begin{matrix}{K = {{R_{eq} \cdot I_{1} \cdot ( {a - 1} )} = {\frac{{\Delta\; V_{2}} - {\Delta\; V_{1}}}{( {b - 1} )}.}}} & (V)\end{matrix}$The process of calculating the correction factor is completed in step505 (FIG. 5A), wherein the correction factorK=(b−1)⁻¹.(V _(be2a) +V _(be1) −V _(be2) −V _(be1a))is calculated. In the preferred embodiment of the invention the currentratio is chosen to be

${\frac{I_{2}}{I_{1}} = {b = 2}},$and accordingly the computation of the corrector factor, performed instep 505, is reduced toK=V _(be2a) +V _(be1) −V _(be2) −V _(be1a).

Once the correction factor is computed, the temperature T′ of thesemiconductor junction can be determined by inputting two currentmagnitudes I₁ and I_(1a), having a predetermined ratio

${\frac{I_{1a}}{I_{1}} = a},$as shown in FIG. 5B. In this process the voltage over the semiconductorjunction (V′_(be1)(I₁) and V′_(be1a)(I_(1a))) is measured in steps 511and 512. The base-emitter voltages obtained corresponds to the currentsI₁ and I_(1a) through the junction,

$\begin{matrix}{{V_{be1}^{\prime} = {{I_{1} \cdot R_{eq}} + {{\eta \cdot V_{t}^{\prime} \cdot {lan}}\frac{I_{1}}{I_{s}}}}},} \\{{V_{be1a}^{\prime} = {{I_{1a} \cdot R_{eq}} + {{\eta \cdot V_{t}^{\prime} \cdot {lan}}\frac{I_{1a}}{I_{s}}}}},}\end{matrix}$and can now be used to compute the junction temperature as follows: ΔV′₁ =V′ _(be1) =R _(eq) .I.(a−1)+η.V′ ₁lan(a)=K+η.V′ ₁.lan(a)

$V_{t}^{\prime} = \frac{( {{\Delta\; V_{1}^{\prime}} - K} )}{\eta \cdot {{lan}(a)}}$

$\begin{matrix}{T^{\prime} = {{\frac{q}{k \cdot \eta \cdot {{lan}(a)}} \cdot ( {{\Delta\; V_{1}^{\prime}} - K} )} = {C \cdot ( {{\Delta\; V_{1}^{\prime}} - K} )}}} & ({VI})\end{matrix}$where

$C = \frac{q}{k \cdot \eta \cdot {{lan}(a)}}$is a pre-calculated constant.

FIG. 3 illustrates a preferred embodiment of the current source 200,according to the invention. As will be explained below, this currentsource embodiment is specially designed to produce four differentcurrents with predetermined ratios, which are required to obtain acorrection factor and temperature measurements. The current source 200consists from a first mirror stage Q_(p1) and Q_(p2), and a secondmirror stage Q₁, Q₂, . . . , Q₁₀.

The operation of the current generator 200 is based on forcing a desiredcurrent by utilizing transistors current mirrors. For instance, thecurrents I_(p1) and I_(p2) through each of the first mirror stage(Q_(p1) and Q_(p2)), when the switching devices S_(p1) and S_(p2) are intheir “short” state (i.e., when they are closed), is actually thecurrent mirrored by transistor Q_(m),I _(p1) =I _(p2) =I _(ref).Consequently, the current through Q_(p) (I_(p)), is determined accordingto the state of the switching devices, S_(p1) and S_(p2).

$I_{p} = \{ \begin{matrix}I_{ref} & S_{p1} & {or} & S_{p2} & {closed} \\{b \times I_{ref}} & S_{p1} & {and} & S_{p2} & {closed}\end{matrix} $where the current ratio b is 2, if Q_(p1) and Q_(p2) are identical(b=2).

It should be noted that theoretically this mirror current scheme can beused to obtain a currentI _(p) =r×I _(ref)(for some integer r) by using r current mirrors Q_(p1), Q_(p2), Q_(p3),. . . , Q_(pr) in the first mirror stage.

Similarly, the currents I₁, I₂, . . . , I_(n), in the second mirrorstage (through Q₁, Q₂, . . . , Q_(n)), is the current mirrored by Q_(p)(I_(p)). Therefore, when all of the switching devices S₁, S₂, . . . ,S_(n), are in their short state, the current produced by the currentgenerator 200 isI_(out) =I ₁ +I ₂ + . . . +I _(n) =n×I _(p)(assuming that Q₁ to Q_(n) are identical). And when S_(p1) and S_(p2)are also in their short state, the current produced is actuallyI _(out) =n×I _(p) =n×(2×I _(ref)).

As will be apparent to those skilled in the art, this current sourcedesign can be modified to-produce r×n currents by utilizing r currentmirrors in the first mirror stage and n current mirrors in the secondmirror stage.

In a preferred embodiment of the invention 10 current mirrors I₁, I₂, .. . , I₁₀, are used in the second mirror stage, by utilizing 10transistors Q₁, Q₂, . . . Q₁₀ (and 10 switching devices S₁, S₂, . . . ,S₁₀) to obtain the following four currents:I ₁ =I _(ref) , I ₁₀=10×I _(ref) , I ₂=2×I _(ref), andI _(2a)=20×I _(ref).

More particularly, the first current I₁=I_(ref) is obtained when onlyS^(p1) or S_(p2), in the first mirror stage, and only one switchingdevice S_(x) (1≦x≦10), in the second mirror stage, are in a short state.The second currentI _(1a)32 10×I _(ref)is obtained by switching all the switching devices of the second mirrorstage S₁, S₂, . . . , S₁₀, and only one switching device from the firstmirror stage, to a short state. The third currentI ₂=2×I _(ref)can be obtained by switching two switching devices form the first mirrorstage and one from the second mirror stage, or one from the first mirrorstage and two from the second mirror stage, to their short stage. Thefourth currentI _(2a)=20×I _(ref)is obtained by switching all the switching devices in the first and thesecond switching stage to the short state.

Thus obtaining

$a = {\frac{I_{1a}}{I_{1}} = {\frac{I_{2a}}{I_{2}} = 10}}$and

${b = {\frac{I_{2}}{I_{1}} = 2}},$and consequently, K=9.R _(eq) .I _(ref) =ΔV ₂ −ΔV ₂=(V _(be2a) −V_(be2))−(V _(be1a) −V _(be1)).(VII)

The expression obtained for the correction factor K in equation (VII) isof course simple to compute. This feature of the preferred embodiment ofthe invention-is utilized for the realization of a simple temperaturemeasurement device, as will be shown and explained with reference toFIG. 4A.

The measurement device shown in FIG. 4A comprises a control unit 401, anUp/Down (U/D) counter 402, a ΣΔ (SD) A/D converter 400, a selectordevice (MUX) 403, and a register 404.

The selector device 403 is used for loading an initial offset to thecounter 402. This offset can be used to convert the temperaturemeasurement from K° (absolute temperature—deg. Kelvin) to C° (deg.Centigrade), and for compensation of any other constant error that maybe required. For example, the measurement process can include a step ofloading the counter with an offset value, followed by four voltagemeasurements (e.g., steps 501 to 504), and the calculation of thecorrection factor (e.g., step 505). Next, the correction factor isloaded into register 404, which is then used to obtain a fixed result inthe temperature measurements.

The SD converter 400 is preferably a ΣΔ modulator. In general it is anAnalog to Digital circuitry capable of sampling its analog signal inputat sampling frequencies much greater than the Nyquist frequency of theinput signal, and capable of outputting a bit stream in which thedensity of ‘1’s is proportional to the ratio of the analog signal input(V_(in)) and a reference signal (V_(ref)).

The input voltage measurement is achieved by accumulating the number of‘1’ outputs from the ΣΔ converter over a predetermined timeframe. Thevalue of the V_(ref) voltage input, the properties of the ΣΔ circuitry(e.g., capacitor ratios), and the integration period, can be used todefine a ‘gain’ that is effectuated on the calculated result by the ΣΔconverter. In other words, the numeric value that represents eachmili-Volt of the measured input can be adjusted according to specificdesign requirements, as described in “Micropower CMOS Temperature Sensorwith Digital Output”, by Anton Bakker and Joan H. Huijsing, IEEE Journalof Solid-State Circuits, Vol. 31, No. 7, July 1996.

The control unit can reset the counter content via its LOAD input, setthe counter operation to UP or DOWN counting via the counter U/D input,and load an initial value into the counter via the counter Din input.The content of the counter can be initialized to a value loaded into thecounter via its Din input. This value is obtained from register 404, theoutput of which is inverted. In this way the counter content can beinitialized with the negation of the correction factor. It should benoted that for complete accuracy, there is a need to invert thecorrection factor bits and add a ‘1’ to the counter. However, for thesake of simplicity, this action can be left out, since in most cases thetemperature readouts are obtained by truncating the counter lower bits,so that the error caused by neglecting the addition of the 1 isnegligible.

The counter operation is triggered by the SD converter 400 via itsEnable input (E). Thus by providing the counter E input with the bitstream emanating from the SD converter 400 output over somepredetermined time frame, the count result that is obtained in thecounter is proportional to the input voltage signal Vin plus the-valuewith which the counter is initialized with.

The control unit 401 is capable of setting the “time base” period atwhich the integration, performed by the U/D counter 402, is carried out.The time base can be used to define the gain of the circuit. In this waythe counter output (Dout) can be multiplied by a constant, and therebythe value of the time base can be pre-set to obtain multiplication bythe constant C

$( {C = \frac{q}{k \cdot \eta \cdot {{lan}(a)}}} )$as required for the calculation in equation VI above.

In general the SD converter 400 generates pulses with a rate which isequivalent to the ratio of V_(in) to V_(ref). These pulses areintegrated over the “time base” by the U/D counter 402. By adjustingV_(ref) properly and providing the voltage over the semiconductorjunction (V_(be)) as input signal V_(in), the computations of thecorrection factor and of the junction temperature are obtained.

The computation of the correction factor is obtained by performing twoUp count operations (steps 421 and 423 in FIG. 4B) in the U/D counter402, utilizing V_(be2a) and V_(be1) as input signals, to add togethertwo voltage measurements. Similarly, by performing two Down countoperations (steps 422 and 424 in FIG. 4B), utilizing V_(be1a) andV_(be2) as input signals, two voltage measurements are subtracted.Additionally, a fixed offset value can be added to the computation bysetting the counter via the Din input, before starting the computation.For example, an offset of −273 can be used for converting the readoutfrom degrees Kelvin to degrees Centigrade.

As was explained hereinabove, a gain can be set by changing the “timebase”. For example, by performing the integration performed by thecounter 402 at ½ the time, the result obtained is scaled to ½ theoriginal value. Thus, to obtain multiplication of the output by aconstant value C, the ratio of the voltage signal inputs to the SDconverter 400 and its internal integration time interval, and the “timebase” period, should be pre-set correspondingly. In this way thecalculated counter output value that is actually obtained is C*ΔV₁ andC*K (depending on the measurement that is being performed), and thereadouts adjusted to be in deg. K° or C° (according to the specificdesign requirements).

The correction factor K should be calculated (step 442 in FIG. 4D) onceevery predetermined period of time, or alternatively, once every Npredetermined number of temperature measurements. The process ofcalculating the correction factor is illustrated in FIG. 4B in a form ofa flow chart. The process begins in step 420 in which the counter 402 isreset (loaded with a zero OFFSET value). The process proceeds in step421 wherein a count UP operation is performed by the counter with aninput voltage ofV _(in) =V _(be2a),that corresponds to current inputI=I _(2a)=20×I _(ref).In the next step 422 a count DOWN operation is performed by the counterwith an input voltage ofV _(in) =V _(be2),that corresponds to current inputI=I ₂=2 ×I _(ref).In steps 423 a count UP operation is performed by the counter with aninput voltage ofV _(in) =V _(be1a), that corresponds to current inputI=I ₁ =I _(ref), and then in step 424 a count DOWN operation isperformed by the counter with an input voltage ofV _(in) =V _(be1a),that corresponds to current inputI=I _(1a)=10×I _(ref),By adjusting properly the “time base” period, the result obtained in thecounter after carrying out steps 421–424, is actually the correction Kfactor multiplied by the fixed gain C,C.K=C.(V _(be1a) +V _(be2))−C.(V _(be2a) +V _(be1)).It should be noted steps 421≧424 can be performed in any order since thesame result will be obtained.

The correction factor is stored in the register 404, and is used toinitialize the counter content before each temperature measurement (step443 in FIG. 4D), as shown in step 432 in FIG. 4C. The counter isinitialized in step 431 with −K by using the inverted value of K ( K)obtained via register 404 output.

The measurement of the junction temperature is obtained by computingT′=C.(ΔV ₁ −K)(step 513 in FIG. 5B), where

${C = \frac{q}{k \cdot \eta \cdot {{lan}(a)}}},$as shown in FIG. 4C. To perform this computation, in step 430, the “timebase” in the control unit is adjusted to obtain a constant gainequivalent to C. The process proceeds in step 432 wherein −K is loadedinto the counter 402, via register 404. Next, in step 433, count UP isperformed with input signalV _(in) =V′ _(be1),which is the voltage measured over the semiconductor junction forjunction current ofI=I _(1a).In the next step, 434, count DOWN is performed with input signalV _(in) =V _(be1),which is the voltage measured over the semiconductor junction forjunction current ofI=I ₁.The value obtained in the counter isT′=C.(ΔV′ ₁ −K).

A process for measuring the correction factor and the semiconductorjunction temperature is schematically illustrated in FIG. 4D.Measurement of the correction factor K, in step 442, is conducted oncein a predetermined period of time, or alternatively after somepredetermined number of temperature measurements 443 are performed. Thisdecision is performed in step 441, according to a preferred policy,which may vary from one application to another. As shown in FIG. 4D, thesemiconductor temperature measurement should be performed after thecorrection factor is measured at least once.

Although the present invention has been described with severalembodiments, various changes and modifications may be suggested to oneskilled in the art. It is intended that the present invention encompasssuch changes and modifications as fall within the scope of the appendedclaims.

1. A method, comprising: determining a temperature of a semiconductorjunction using two or more voltage responses of the junction and acorrection factor, the correction factor at least partially correctingfor error in determining the temperature of the junction; anddetermining the correction factor based on two or more additionalvoltage responses by determining a first voltage difference between afirst and a second additional voltage response; determining a secondvoltage difference between a third and a fourth additional voltageresponse; and determining a difference between the first and secondvoltage differences; converting the two or more additional voltageresponses into two or more digital bit streams; determining thecorrection factor using the digital bit streams by: initializing a valuein a counter; incrementing the value in the counter for each one valuein the digital bit stream associated with the fourth additional voltageresponse; decrementing the value in the counter for each one value inthe digital bit stream associated with the third additional voltageresponse; incrementing the value in the counter for each one value inthe digital bit stream associated with the first additional voltageresponse; and decrementing the value in the counter for each one valuein the digital bit stream associated with the second additional voltageresponse, the correction factor based on the value in the counter. 2.The method of claim 1, wherein: the two or more voltage responsescomprise first and second voltage responses; and determining thetemperature of the junction comprises: inverting the determinedcorrection factor; loading the inverted correction factor into thecounter; incrementing the value in the counter for each one value in adigital bit stream associated with the second voltage response; anddecrementing the value in the counter for each one value in a digitalbit stream associated with the first voltage response, the temperaturebased on the value in the counter.
 3. The method of claim 1, whereindetermining the temperature of the junction comprises determining thetemperature of the junction using a formula ofT=C*(V ₂ −V ₁ −K), where T represents the temperature of the junction, Crepresents a constant, V₂ represents a second of the voltage responses,V₁ represents a first of the voltage responses, and K represents thecorrection factor.
 4. The method of claim 2, wherein determining thetemperature of the junction comprises determining the temperature of thejunction using a formula ofT=C*(V ₂ −V ₁ −K), where T represents the temperature of the junction, Crepresents a constant, V₂ represents a second of the voltage responses,V₁ represents a first of the voltage responses, and K represents thecorrection factor.
 5. The method of claim 1, wherein the error compriseserror introduced by parasitic Ohmic resistances in the junction.
 6. Amethod, comprising: determining a temperature of a semiconductorjunction using two or more voltage responses of the junction and acorrection factor, the correction factor at least partially correctingfor error in determining the temperature of the junction; anddetermining the correction factor based on two or more additionalvoltage responses by determining a first voltage difference between afirst and a second additional voltage response: determining a secondvoltage difference between a third and a fourth additional voltageresponse; and determining a difference between the first and secondvoltage differences, the correction factor based on the differencebetween the first and second voltage differences; converting the two ormore additional voltage responses into two or more digital bit streams;determining the correction factor using the digital bit streams by:initializing a value in a counter; incrementing the value in the counterfor each one value in the digital bit stream associated with the fourthadditional voltage response; decrementing the value in the counter foreach one value in the digital bit stream associated with the thirdadditional voltage response; incrementing the value in the counter foreach one value in the digital bit stream associated with the firstadditional voltage response; and decrementing the value in the counterfor each one value in the digital bit stream associated with the secondadditional voltage response, the correction factor based on the value inthe counter.
 7. The method of claim 6, wherein: the two or more voltageresponses comprise first and second voltage responses; and determiningthe temperature of the junction comprises: inverting the determinedcorrection factor; loading the inverted correction factor into thecounter; incrementing the value in the counter for each one value in adigital bit stream associated with the second voltage response; anddecrementing the value in the counter for each one value in a digitalbit stream associated with the first voltage response, the temperaturebased on the value in the counter.
 8. The method of claim 6, whereindetermining the temperature of the junction comprises determining thetemperature of the junction using a formula ofT=C*(V ₂ −V ₁ −K), where T represents the temperature of the junction, Crepresents a constant, V₂ represents a second of the voltage responses,V₁ represents a first of the voltage responses, and K represents thecorrection factor.
 9. The method of claim 6, wherein the error compriseserror introduced by parasitic Ohmic resistances in the junction.